Company Filing History:
Years Active: 2018
Title: Innovations by Quan Jing in Semiconductor Technology
Introduction
Quan Jing is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His innovative approach has led to the development of a unique patent that enhances the efficiency of semiconductor manufacturing processes.
Latest Patents
Quan Jing holds a patent titled "Method for forming shallow trenches of the dual active regions." This invention discloses a method for forming shallow trenches in dual active regions. The process begins with forming an etch stop layer on a semiconductor substrate. Following this, a first accurate photomask is used to expose and develop the semiconductor substrate until the etch stop layer is exposed on the top of the first and second shallow trench regions. The etch stop layer is then entirely etched in the exposed regions. A second photomask is utilized to expose and develop the first shallow trench regions, which require a deeper etch depth than the second shallow trench regions. The etching process continues to form preliminary depth in the first shallow trench regions, after which the second photomask is removed. Finally, the etch stop layer serves as a mask, allowing for simultaneous etching of both shallow trench regions to create trenches of varying depths. This invention optimizes the etching process and reduces costs associated with photomask applications.
Career Highlights
Quan Jing is currently employed at Shanghai Huali Microelectronics Corporation. His work at this esteemed company has allowed him to focus on advancing semiconductor technologies. His innovative methods have contributed to the efficiency and effectiveness of semiconductor manufacturing.
Collaborations
Quan Jing has collaborated with notable colleagues, including Jin Xa Xu and Minjie Chen. Their teamwork has fostered an environment of innovation and creativity within the semiconductor field.
Conclusion
In summary, Quan Jing is a prominent inventor whose work in semiconductor technology has led to significant advancements. His patent for forming shallow trenches in dual active regions exemplifies his innovative spirit and dedication to improving manufacturing processes.