Qiushi Xie

Title: Qiushi Xie: Innovator in Semiconductor Technology

Introduction

Qiushi Xie is a prominent inventor based in Beijing, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique patent that enhances the efficiency of semiconductor manufacturing processes.

Latest Patents

Qiushi Xie holds a patent for a pattern sheet, semiconductor intermediate product, and hole etching method. This patent discloses a pattern sheet that includes a substrate, a dielectric layer, and a mask structure. The mask structure consists of a multi-layer mask layer, with the uppermost layer being a photoresist layer. The design ensures that the thickness of each layer and the etching selectivity ratios between the layers below the mask layer are optimized. This innovation allows for the etching of a through-hole that penetrates the thickness of the lower layer of the mask layer, while maintaining a remaining thickness of the upper layer that is greater than or equal to zero.

Career Highlights

Qiushi Xie is currently employed at Beijing Naura Microelectronics Equipment Co., Ltd. His work at this company has positioned him as a key player in advancing semiconductor technologies. His expertise and innovative mindset have contributed to the company's reputation in the industry.

Collaborations

Qiushi Xie has collaborated with notable colleagues, including Xiaoping Shi and Qingjun Zhou. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in the semiconductor field.

Conclusion

Qiushi Xie's contributions to semiconductor technology through his patent and work at Beijing Naura Microelectronics Equipment Co., Ltd. highlight his role as an influential inventor in the industry. His innovative approaches continue to shape the future of semiconductor manufacturing.