Company Filing History:
Years Active: 2001
Title: Qiqing Ouyang: Innovator in High Mobility Heterojunction Transistors
Introduction
Qiqing Ouyang is a prominent inventor based in Austin, TX (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of high mobility heterojunction transistors. Her innovative work has led to the granting of a patent that showcases her expertise and dedication to advancing technology.
Latest Patents
Qiqing Ouyang holds a patent for a "High mobility heterojunction transistor and method." This invention involves a heterojunction transistor with high mobility carriers in the channel region. The design includes a source region and a drain region formed in a semiconductor body, with these regions comprising doped semiconductor alloys separated from the substrate by heterojunctions. The channel region is situated between the source and drain regions and consists of an undoped layer of an alloy of the semiconductor material, along with a deposited layer of material of the semiconductor body overlying the undoped layer. A gate electrode is formed on a gate oxide over the channel region. The fabrication process involves implanting dopants of conductivity type opposite to the substrate and a material in the alloy, followed by annealing the structure to form the alloy of the semiconductor material under the undoped layer.
Career Highlights
Qiqing Ouyang is affiliated with the University of Texas System, where she continues to contribute to research and innovation in semiconductor technology. Her work has garnered attention for its potential applications in various electronic devices, enhancing performance and efficiency.
Collaborations
Some of her notable coworkers include Al F Tasch, Jr and Sanjay K Banerjee, who have collaborated with her on various projects related to semiconductor technology.
Conclusion
Qiqing Ouyang's contributions to the field of high mobility heterojunction transistors exemplify her innovative spirit and commitment to advancing technology. Her patent reflects her expertise and the potential impact of her work on the future of electronics.