Company Filing History:
Years Active: 2006-2010
Title: Innovations of Qiging Ouyang
Introduction
Qiging Ouyang is a notable inventor based in Yorktown Heights, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on improving the performance and efficiency of bipolar junction transistors and complementary metal oxide semiconductors.
Latest Patents
One of his latest patents is titled "Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation." This invention presents a 'subcollector-less' silicon-on-insulator (SOI) bipolar junction transistor (BJT) that eliminates the need for an impurity-doped subcollector. Instead, it utilizes a back gate-induced, majority carrier accumulation layer as the subcollector, allowing for a simplified integration scheme and reduced manufacturing costs.
Another significant patent is "Strained complementary metal oxide semiconductor (CMOS) on rotated wafers and methods thereof." This invention provides CMOS structures that include at least one strained pFET located on a rotated semiconductor substrate to enhance device performance. The method involves utilizing a Si-containing semiconductor substrate with a (100) crystal orientation, rotated by about 45 degrees, to improve the channels' performance through induced strain.
Career Highlights
Qiging Ouyang is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the semiconductor field. His work has contributed to advancements in technology that are crucial for modern electronic devices.
Collaborations
He has collaborated with notable coworkers such as Jack Oon Chu and Gabriel Konrad Dehlinger, further enhancing the innovative environment at IBM.
Conclusion
Qiging Ouyang's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work continues to influence the development of advanced electronic components.
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