Singapore, Singapore

Qifeng Ruan

This inventor holds 1 USPTO granted patent. Top assignee: Singapore University of Technology and Design. Active years: 2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qifeng Ruan. Retrieved from https://idiyas.com/inventor/qifeng-ruan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2023

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1 patent (USPTO):Explore Patents

Title: Qifeng Ruan: Innovator in Patterned Structure Technology

Introduction

Qifeng Ruan is a notable inventor based in Singapore, recognized for his contributions to the field of patterned structure technology. He has developed innovative methods that enhance the fabrication processes in various applications.

Latest Patents

Qifeng Ruan holds a patent for a "Method of forming a patterned structure and device thereof." This patent describes a comprehensive method that includes forming a resist layer on a substrate, exposing a portion of the resist layer to a focused electron beam, and performing plasma treatment to create a patterned structure. His invention significantly advances the techniques used in microfabrication.

Career Highlights

Qifeng Ruan is affiliated with the Singapore University of Technology and Design, where he contributes to research and development in advanced manufacturing technologies. His work has garnered attention for its practical applications in various industries.

Collaborations

He collaborates with esteemed colleagues, including You Sin Tan and Joel Yang, who share his passion for innovation and research in technology.

Conclusion

Qifeng Ruan's contributions to the field of patterned structure technology exemplify the spirit of innovation. His work continues to influence advancements in microfabrication techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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