Porter Dean Gerber

Title: **Porter Dean Gerber: Innovator in Electron Beam Lithography**

Introduction

Porter Dean Gerber, based in White Plains, NY, is an accomplished inventor with a focus on advancements in electron beam lithography. With two patents to his name, Gerber has made significant contributions to the field, enhancing the precision and efficiency of lithographic processes used in semiconductor manufacturing.

Latest Patents

Gerber's latest patents showcase his innovative approaches in electron beam proximity correction methods. The first patent, titled "Electron beam proximity correction method for hierarchical design data," outlines a method for formulating exposure doses for an electron beam on a resist film. This method compensates for electron scattering effects while preserving hierarchical design data to the greatest extent possible. The innovative technique includes correcting for both forward scatter and backscatter effects while accounting for interactions of shapes influenced by the forward scatter range. In a further iteration, a multiple Gaussian approximation is employed to treat different Gaussian terms distinctly, enhancing the accuracy of the corrections.

The second patent, titled "Method for correcting proximity effects in electron beam lithography," focuses on a sophisticated proximity effect correction approach applicable for high voltages and densely packed patterns. This method involves the computation of two matrices: the Proximity Matrix (P) and the Fractional Density Matrix (F). These matrices facilitate the precise computation of dose corrections, which can be assigned to shapes either through area-weighted averages or through interpolation techniques. Importantly, this patent also explores forward scattering corrections, providing a comprehensive strategy for optimizing lithographic precision.

Career Highlights

Porter Dean Gerber is associated with the International Business Machines Corporation (IBM), where he has applied his expertise to advance technologies related to semiconductor fabrication. His work demonstrates a deep understanding of the complexities associated with electron beam lithography and the critical role it plays in modern electronics.

Collaborations

Throughout his career, Gerber has collaborated with notable colleagues, including Christopher J Ashton and Dieter P Kern. These partnerships have fostered innovative research and development efforts, resulting in patents that significantly contribute to the field of electron beam lithography.

Conclusion

Porter Dean Gerber's contributions to electron beam lithography are noteworthy, marking him as a key inventor in the field. His patents highlight sophisticated techniques for correcting proximity effects, enhancing lithographic accuracy, and improving the overall quality of semiconductor devices. As the industry continues to evolve, Gerber's work remains a vital part of innovation and advancement in electronics manufacturing.