Po-I Sun

Title: Po-I Sun: Innovator in Power Junction Field Effect Transistors

Introduction

Po-I Sun is a notable inventor based in Taipei Hsien, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of power junction field effect transistors (JFETs). His innovative approach to manufacturing processes has paved the way for advancements in power management technologies.

Latest Patents

Po-I Sun holds a patent for a manufacturing process and structure of a power junction field effect transistor. The patent describes a method that allows current to flow vertically from the drain region on the bottom side to the source region on the topside of the device. By regulating the voltage applied between the gate regions and the source region, this JFET can handle large currents and higher voltages, similar to metal oxide semiconductor field effect transistors (MOSFETs). He has 1 patent to his name.

Career Highlights

Po-I Sun is currently employed at Pyramis Corporation, where he continues to work on innovative solutions in the field of electronics. His expertise in power management systems has made him a valuable asset to the company.

Collaborations

Po-I Sun collaborates with Jun Zeng, a coworker at Pyramis Corporation. Their combined efforts contribute to the advancement of technology in their field.

Conclusion

Po-I Sun's work in the development of power junction field effect transistors showcases his innovative spirit and dedication to advancing electronic technologies. His contributions are significant in the realm of power management, and his patent reflects his expertise and commitment to innovation.