Company Filing History:
Years Active: 2021
Title: Po-Hsiang Yang: Innovator in Bipolar Transistor Technology
Introduction
Po-Hsiang Yang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of bipolar transistors. His innovative approach has led to the creation of a unique patent that enhances the functionality of these essential electronic components.
Latest Patents
Yang holds a patent for a bipolar transistor that features a collector layer, a base layer on the collector layer, and a first elongated emitter mesa on the base layer. This design includes a long side and a short side, with the long side aligned parallel to a specific direction. Additionally, the patent describes n separate first emitter-contact structures positioned along this direction on the first elongated emitter mesa, where n is an integer greater than one. This invention represents a significant advancement in bipolar transistor technology.
Career Highlights
Po-Hsiang Yang is currently employed at Richwave Technology Corporation, where he continues to innovate and develop new technologies. His work at Richwave has positioned him as a key player in the semiconductor industry, contributing to the company's reputation for excellence in electronic components.
Collaborations
Yang collaborates with fellow inventor Chuan-Chen Chao, working together to push the boundaries of technology and innovation in their field.
Conclusion
Po-Hsiang Yang's contributions to bipolar transistor technology exemplify his commitment to innovation and excellence. His patent and ongoing work at Richwave Technology Corporation highlight his role as a leading inventor in the semiconductor industry.