This inventor holds 1 USPTO granted patent. Top assignees: Kabushiki Kaisha Toshiba, National Institute for Materials Science. Active years: 2019.
Company Filing History:
1 out of 53,250 
1 out of 575 
Years Active: 2019
Title: Po-Han Cheng: Innovator in Magnetoresistive Technology
Introduction
Po-Han Cheng is a notable inventor based in Tsukuba, Japan. He has made significant contributions to the field of magnetoresistive elements and magnetic memory devices. His innovative work has led to the development of a patent that showcases his expertise in this specialized area.
Latest Patents
One of Po-Han Cheng's key patents is for a magnetoresistive element and magnetic memory device. According to one embodiment, this magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is positioned between the first and second magnetic layers and consists of an oxide featuring an inverse-spinel structure. This invention has potential applications in advanced memory technologies.
Career Highlights
Throughout his career, Po-Han Cheng has worked with prominent organizations such as Kabushiki Kaisha Toshiba and the National Institute for Materials Science. His experience in these institutions has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research.
Collaborations
Some of Po-Han Cheng's notable coworkers include Yushi Kato and Tadaomi Daibou. Their collaborative efforts have further advanced the research and development of magnetoresistive technologies.
Conclusion
Po-Han Cheng's contributions to the field of magnetoresistive elements and magnetic memory devices highlight his innovative spirit and dedication to advancing technology. His work continues to influence the industry and pave the way for future advancements.