Po-Chang Jen

Title: Po-Chang Jen: Innovator in Semiconductor Technology

Introduction

Po-Chang Jen is a notable inventor based in Taoyuan, Taiwan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patent that enhances the performance of semiconductor devices.

Latest Patents

Po-Chang Jen holds a patent for a semiconductor device designed to increase capacitance effective area and effective capacitance value. The patent describes a semiconductor device that includes a substrate, a well, an oxidation layer, a gate electrode, and a shared source/drain electrode. The substrate features a first surface and a second surface that are opposite to each other. The well is formed within the substrate, with the substrate and the well having different conductivity types. The oxidation layer is situated in the well, while the gate electrode is positioned above the first surface and contains a first opening. The shared source/drain electrode is located near the first surface in the oxidation layer and is exposed through the first opening. This shared source/drain electrode possesses the first conductivity type. Po-Chang Jen has 1 patent to his name.

Career Highlights

Po-Chang Jen is currently employed at Raydium Semiconductor Corporation, where he continues to innovate in the semiconductor field. His work at Raydium has positioned him as a key player in advancing semiconductor technologies.

Collaborations

Throughout his career, Po-Chang Jen has collaborated with talented individuals such as Kuan-Hung Chou and Ming-Heng Tsai. These collaborations have contributed to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Po-Chang Jen is a distinguished inventor whose work in semiconductor technology has led to significant advancements. His patent reflects his commitment to innovation and excellence in the field.