Pietro Lizzio

Title: The Innovations of Pietro Lizzio

Introduction

Pietro Lizzio is a notable inventor based in Catania, Italy. He has made significant contributions to the field of semiconductor technology, particularly with his innovative designs and methods.

Latest Patents

Lizzio holds a patent for a vertical PNP transistor and its relative fabrication method. This invention features a vertical PNP transistor integrated into a semiconductor material wafer, which includes an N-type substrate and an N-type epitaxial layer forming a surface. The design incorporates a P-type buried collector region, a collector sinker, and a gain-modulating N-type buried base region. The gain of the transistor can be adjusted by varying the extension and doping concentration of the buried base region, allowing for enhanced performance in various applications.

Career Highlights

Throughout his career, Lizzio has worked with prominent companies in the semiconductor industry. He has been associated with the Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno and SGS-Thomson Microelectronics S.r.l. His work has contributed to advancements in microelectronics and semiconductor fabrication techniques.

Collaborations

Lizzio has collaborated with notable colleagues, including Salvatore Leonardi and Davide Giuseppe Patti. These partnerships have fostered innovation and development in their respective fields.

Conclusion

Pietro Lizzio's contributions to semiconductor technology through his patent and collaborations highlight his role as an influential inventor. His work continues to impact the industry and inspire future innovations.