Pierre Fazan

Title: Pierre Fazan: Innovator in DRAM Technology

Introduction

Pierre Fazan is a notable inventor based in Le Landeron, Switzerland. He has made significant contributions to the field of memory technology, particularly in dynamic random-access memory (DRAM). His innovative approach has led to the development of a unique DRAM architecture that enhances memory efficiency.

Latest Patents

Pierre Fazan holds 1 patent for his invention related to DRAM technology. His patent describes a DRAM formed of an array of cells, each of which includes a capacitive memory point and a control transistor. The array is constructed from the repetition of an elementary pattern that extends over three rows and three columns, incorporating six cells. This design ensures that each row and column of the elementary pattern contains two cells, with each column featuring a first and a second bit line connected to half of the memory cells included in that column.

Career Highlights

Pierre Fazan is currently employed at STMicroelectronics S.A., a leading company in semiconductor technology. His work at STMicroelectronics has allowed him to collaborate with other talented professionals in the field, contributing to advancements in memory solutions.

Collaborations

Some of Pierre's coworkers include Richard Ferrant and Pascale Mazoyer. Their collective expertise fosters an environment of innovation and creativity, driving the development of cutting-edge technologies.

Conclusion

Pierre Fazan's contributions to DRAM technology exemplify the spirit of innovation in the semiconductor industry. His work continues to influence advancements in memory technology, showcasing the importance of inventive minds in shaping the future.