Company Filing History:
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Years Active: 1977
Title: Pierre Baruch: Innovator in Semiconductor Doping Technology
Introduction
Pierre Baruch is a notable inventor based in Paris, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for doping semiconductor materials. His work has implications for various applications in electronics and materials science.
Latest Patents
Pierre Baruch holds a patent for a method aimed at improving the doping of semiconductor materials. This patent outlines a two-step process where the semiconductor material is first doped with impurities of a specific conductivity type and concentration profile. In the second step, the material is subjected to high temperatures and bombarded with a beam of particles, which enhances the migration of impurities. This process results in an increased impurity concentration, regardless of the initial concentration gradient.
Career Highlights
Throughout his career, Pierre Baruch has worked with prominent organizations such as Agence Nationale De Valorisation De La Recherche (ANVAR) and Commissariat à l'Énergie Atomique. His experience in these institutions has allowed him to develop and refine his innovative techniques in semiconductor doping.
Collaborations
Pierre has collaborated with esteemed colleagues, including Joseph Borel and Joel Monnier. These partnerships have contributed to the advancement of his research and the successful implementation of his patented methods.
Conclusion
Pierre Baruch's contributions to semiconductor technology through his innovative doping methods highlight his role as a significant inventor in the field. His work continues to influence advancements in electronics and materials science.