Berkeley Heights, NJ, United States of America

Peter M Thomas


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 19(Granted Patents)


Location History:

  • Berkeley Heights, NJ (US) (1991)
  • Murray Hill, NJ (US) (1992)

Company Filing History:


Years Active: 1991-1992

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2 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Peter M. Thomas

Introduction

Peter M. Thomas is a notable inventor based in Berkeley Heights, NJ (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his expertise and innovative spirit. His work primarily focuses on methods for creating semiconductor devices, which are crucial in modern electronics.

Latest Patents

Thomas's latest patents include a method of making a semiconductor device. This method involves depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also includes depositing a Ti/Pt layer onto an n-doped region or onto a AuGe intermediate layer on the n-doped region, followed by rapid thermal processing. The device exemplarily is a semiconductor laser, with the n-doped region being InP and the p-doped region being InGaAs or InGaAsP. The rapid thermal processing involves heating in the range of 425°C to 500°C for 10 to 100 seconds. This method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and wafer breakage, and results in contacts that can be thermally stable with very low specific contact resistance, exemplarily as low as 10-7 Ω·cm2.

Another patent by Thomas is a rapid thermal processing method of making a semiconductor device. This inventive method produces a device with non-alloyed ohmic contacts of common composition to both n-doped and p-doped regions of a semiconductor body. It involves the deposition of a Ti/Pt layer on both regions, followed by rapid thermal processing. The device is again a semiconductor laser, with similar specifications for the n-doped and p-doped regions. This method also comprises fewer processing steps than typical prior art methods, reducing fabrication errors and wafer breakage while achieving thermally stable contacts with low specific contact resistance.

Career Highlights

Peter M. Thomas is associated with AT&T Bell Laboratories, a renowned institution known for its contributions to telecommunications and technology. His work at this prestigious company has allowed him to develop innovative solutions in semiconductor technology.

Collaborations

Some of his notable coworkers include William C. Dautremont-Smith and Avishay Katz, who have collaborated with him on various projects within the field

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