Percy V Gilbert

Title: The Innovations of Percy V. Gilbert

Introduction

Percy V. Gilbert is a notable inventor based in Poughquag, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work primarily focuses on methods that enhance the performance and reliability of CMOS devices.

Latest Patents

One of his latest patents is titled "Method for avoiding oxide undercut during pre-silicide clean for thin spacer FETs." This invention describes a method for forming a CMOS device that prevents dielectric layer undercut during a pre-silicide cleaning step. The process involves the formation of a gate stack on a semiconductor substrate surface, where a dielectric layer is created over the substrate. Nitride spacer elements are then formed at each vertical sidewall of the gate stack. The dielectric layer is removed using an etch process, ensuring that a portion remains beneath each spacer. A nitride layer is subsequently deposited and etched to leave a 'plug' that seals the dielectric layer, preventing undercut during the pre-silicide clean process. This innovation is crucial for integrating thin-spacer transistor geometries, which are essential for improving transistor drive current.

Career Highlights

Percy V. Gilbert is associated with the International Business Machines Corporation (IBM), where he has contributed to various projects and innovations in semiconductor technology. His expertise in this field has led to advancements that benefit the industry.

Collaborations

Some of his notable coworkers include Atul Champaklal Ajmera and Andres Bryant, who have collaborated with him on various projects within the company.

Conclusion

Percy V. Gilbert's contributions to semiconductor technology through his patents and work at IBM highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of CMOS device fabrication.