Lyngby, Denmark

Peixiong Shi

This inventor holds 1 USPTO granted patent. Top assignee: Nil Technology Aps. Active years: 2013.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Peixiong Shi. Retrieved from https://idiyas.com/inventor/peixiong-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2013

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1 patent (USPTO):Explore Patents

Title: Peixiong Shi - Innovator in Electron Beam Lithography

Introduction

Peixiong Shi is a notable inventor based in Lyngby, Denmark. He has made significant contributions to the field of electron beam lithography, a technology that plays a crucial role in the production of high-quality micro-patterns on substrates.

Latest Patents

Peixiong Shi holds a patent for a "Method for performing electron beam lithography." This invention relates to a high-speed technique for producing substrates with developed patterns, such as hole or dot arrays. The method utilizes an electron beam source capable of emitting an electron beam towards energy-sensitive resist, forming patterns that overlap to achieve precise definitions of holes or dots.

Career Highlights

Peixiong Shi is associated with Nil Technology Aps, where he applies his expertise in electron beam lithography. His innovative approach has led to advancements in the efficiency and quality of pattern production, making significant impacts in the field.

Collaborations

Peixiong has collaborated with notable colleagues, including Theodor Kamp Nielsen and Brian Bilenberg, contributing to the advancement of technologies in their respective fields.

Conclusion

Peixiong Shi's work in electron beam lithography exemplifies the innovative spirit of modern inventors. His contributions continue to influence the development of high-quality micro-patterning techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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