Peigang Liu

Title: Peigang Liu: Innovator in GaN Device Integration

Introduction

Peigang Liu is a notable inventor based in Nanjing, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of Gallium Nitride (GaN) devices. His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Peigang Liu holds a patent for an "Enhancement-mode N-channel and P-channel GaN device integration structure." This invention comprises a substrate with an Al—N nucleating layer, an AlGaN buffer layer, a GaN channel layer, and an AlGaN barrier layer arranged sequentially. The design includes an isolation layer that divides the AlGaN barrier layer and the GaN channel layer. On one side of the isolation layer, a P-channel device is arranged, which consists of a first P-GaN layer, a first GaN isolation layer, and a first P+-GaN layer. The first gate is inlaid in the first P+-GaN layer, with a gate dielectric layer positioned between them. An N-channel device is arranged on the opposite side of the isolation layer, demonstrating a sophisticated integration of both device types.

Career Highlights

Peigang Liu is affiliated with Southeast University, where he continues to advance his research and development efforts in semiconductor technologies. His work is characterized by a commitment to innovation and excellence in engineering.

Collaborations

Peigang Liu collaborates with esteemed colleagues, including Long Zhang and Weifeng Sun. Their combined expertise contributes to the advancement of research in GaN devices and related technologies.

Conclusion

Peigang Liu's contributions to the field of GaN device integration highlight his role as a leading inventor in semiconductor technology. His innovative patent reflects a significant advancement in the integration of N-channel and P-channel devices, showcasing his expertise and dedication to the field.