Company Filing History:
Years Active: 2015-2016
Title: Pei-Yi Gu: Innovator in Memory Technology
Introduction
Pei-Yi Gu is a notable inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on advancements in resistive random access memory, which is crucial for modern computing.
Latest Patents
Pei-Yi Gu's latest patents include innovative designs and manufacturing methods for memory cells. One of his patents describes a memory cell of a resistive random access memory and the associated manufacturing method. This method involves forming a first electrode, a metal oxide layer, and an electrode buffer stacked layer, which enhances the memory cell's performance. Another patent details a three-dimensional resistance memory structure that includes a stack of layers encapsulated in a dielectric layer. This design features L-shaped variable resistance spacers that improve the memory's efficiency and functionality.
Career Highlights
Pei-Yi Gu is currently employed at the Industrial Technology Research Institute, where he continues to push the boundaries of memory technology. His work has been instrumental in developing new methods that enhance the performance and reliability of memory devices.
Collaborations
Pei-Yi Gu collaborates with talented individuals in his field, including Frederick Chen and Yu-Sheng Chen. Their combined expertise fosters an environment of innovation and creativity, leading to groundbreaking advancements in technology.
Conclusion
Pei-Yi Gu's contributions to memory technology exemplify the spirit of innovation. His patents and ongoing work at the Industrial Technology Research Institute highlight his commitment to advancing the field.