Ventura, CA, United States of America

Pavel N Laptev


Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2014

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2 patents (USPTO):Explore Patents

Title: Innovations by Pavel N. Laptev

Introduction

Pavel N. Laptev is a notable inventor based in Ventura, CA (US). He has made significant contributions to the field of reactive sputtering technology. With a total of 2 patents, his work focuses on enhancing the performance and quality of deposited films in various applications.

Latest Patents

One of his latest patents involves a stress adjustment mechanism in reactive sputtering. In a dual cathode magnetron, an adjustment circuit is provided between a pair of sputter targets that have a coaxial relationship. This circuit modifies the distribution of ion and electron currents flowing from the plasma discharge to a substrate within a sputter chamber. The stress adjustment circuit is crucial for controlling the ion bombardment of the growing films on the substrate, which ultimately influences the stress in the deposited films. A preferred embodiment of this invention includes a variable resistor positioned between an internal shield acting as a passive anode and a target. The variable resistor's value affects the plasma discharge current distribution, allowing for effective adjustments to the properties of the deposited films.

Career Highlights

Pavel N. Laptev is associated with Oem Group, LLC, where he continues to innovate and develop new technologies. His expertise in reactive sputtering has positioned him as a key figure in this specialized field.

Collaborations

Pavel collaborates with Valery V. Felmetsger, contributing to advancements in their shared area of expertise.

Conclusion

Pavel N. Laptev's contributions to the field of reactive sputtering demonstrate his commitment to innovation and excellence. His patents reflect a deep understanding of the complexities involved in film deposition technology.

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