Company Filing History:
Years Active: 1983-1991
Title: The Innovations of Paul S. Peercy
Introduction
Paul S. Peercy is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of semiconductor memory and photoferroelectric materials. With a total of 2 patents, his work has advanced the technology used in memory devices and image storage.
Latest Patents
One of Peercy's latest patents is for a nonvolatile semiconductor memory that features a three-dimensional charge storage mechanism. This innovative layered semiconductor device includes a storage channel that allows charge carriers to flow laterally from a source to a drain. The design incorporates isolation materials, such as a Schottky barrier or a heterojunction, which are strategically placed to retain charge within a designated storage portion. The charge retention time is determined by the nonvolatile characteristics of the isolation materials, enabling efficient read operations.
Another significant patent focuses on enhancing the photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramics through positive ion implantation. This method significantly improves the material's sensitivity to visible light, making it suitable for high-resolution photoferroelectric image storage and display devices. The positive ion implantation process shifts the absorption characteristics of PLZT, allowing it to respond to various light sources, including sunlight and conventional room lighting.
Career Highlights
Peercy has had a distinguished career, contributing to advancements in semiconductor technology and materials science. His work has been recognized for its impact on the development of nonvolatile memory devices and innovative imaging technologies.
Collaborations
Throughout his career, Peercy has collaborated with esteemed colleagues, including Cecil E. Land and L. Ralph Dawson. These partnerships have fostered a collaborative environment that has led to groundbreaking innovations in their respective fields.
Conclusion
Paul S. Peercy's contributions to the fields of semiconductor memory and photoferroelectric materials have made a lasting impact on technology. His innovative patents reflect a commitment to advancing the capabilities of memory devices and imaging technologies.