Mahopac, NY, United States of America

Paul Chung-Muh Chang


Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2010

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1 patent (USPTO):Explore Patents

Title: The Innovations of Paul Chung-Muh Chang

Introduction

Paul Chung-Muh Chang is an accomplished inventor based in Mahopac, NY (US). He has made significant contributions to the field of semiconductor technology. His innovative work focuses on reducing parasitic capacitance in semiconductor structures, which is crucial for enhancing the performance of MOSFETs.

Latest Patents

Paul Chang holds a patent for a semiconductor structure designed to provide lower parasitic capacitance between the gate electrode and contact vias. This invention maintains a similar level of stress applied by a nitride liner as conventional MOSFETs. By reducing the height of the gate electrode and keeping the gate spacer height consistent, his design optimizes performance. The nitride liner contacts only the outer sidewalls of the gate spacer, ensuring that the inner sidewalls experience minimal contact. This innovative approach allows for the application of stress to the channel of the MOSFET, similar to traditional designs. The area above the gate electrode is either filled with a low-k dielectric material or contains a cavity with a dielectric constant of approximately 1.0. This design effectively reduces parasitic capacitance, enhancing the overall efficiency of the semiconductor structure. Paul Chang has 1 patent to his name.

Career Highlights

Paul Chang is associated with the International Business Machines Corporation (IBM), where he continues to contribute to advancements in semiconductor technology. His work has been instrumental in developing solutions that address the challenges faced in modern electronics.

Collaborations

Some of his notable coworkers include William K Henson and Dureseti Chidambarrao, who have collaborated with him on various projects within the field.

Conclusion

Paul Chung-Muh Chang's innovative contributions to semiconductor technology demonstrate his commitment to advancing the field. His patent for a semiconductor structure with reduced parasitic capacitance is a testament to his expertise and creativity.

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