Company Filing History:
Years Active: 2009
Title: Innovations by Patrick Algotsson in Vertical Bipolar Transistors
Introduction
Patrick Algotsson is a notable inventor based in Stockholm, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the development of vertical bipolar transistors. His innovative approach has led to advancements that enhance the performance characteristics of integrated circuits.
Latest Patents
Patrick Algotsson holds a patent for a method for producing vertical bipolar transistors and integrated circuits. This method involves creating vertical bipolar transistors with varying voltage breakdown and high-frequency performance on a single die. The process includes forming a buried collector region along with base and emitter regions above it. The design allows for specific overlaps between the base and emitter regions and the buried collector region, optimizing the performance of each transistor.
Career Highlights
Patrick is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work focuses on enhancing the efficiency and functionality of electronic components through innovative designs and methods. His expertise in semiconductor technology has positioned him as a valuable asset in his field.
Collaborations
Patrick collaborates with talented professionals such as Hans Norström and Karin Andersson. Together, they work on advancing semiconductor technologies and exploring new possibilities in electronic design.
Conclusion
Patrick Algotsson's contributions to the field of vertical bipolar transistors exemplify the impact of innovation in semiconductor technology. His patent and ongoing work at Infineon Technologies AG highlight his commitment to advancing electronic performance.