Pang-Dow Foo

Title: Innovations of Pang-Dow Foo in RF LDMOS Technology.

Introduction

Pang-Dow Foo is a notable inventor based in Singapore, recognized for his contributions to the field of RF LDMOS technology. He holds two patents that showcase his innovative approach to enhancing the performance of LDMOSFET devices.

Latest Patents

His latest patents focus on the development of RF LDMOS on partial SOI substrate. In the prior art, LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high-frequency characteristics. Additionally, good high-frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI), but this structure has poor power handling capabilities. The present invention achieves both good high-frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

Career Highlights

Pang-Dow Foo is affiliated with the Institute of Microelectronics, where he continues to push the boundaries of semiconductor technology. His work has significantly impacted the efficiency and performance of RF devices.

Collaborations

He has collaborated with notable colleagues such as Shuming Xu and Hanhua Feng, contributing to advancements in their shared field of expertise.

Conclusion

Pang-Dow Foo's innovative work in RF LDMOS technology exemplifies the importance of continuous research and development in the semiconductor industry. His patents reflect a commitment to improving device performance while addressing existing limitations.