Nirasaki, Japan

Osamu Nagarekawa

This inventor holds 2 USPTO granted patents. Top assignee: Hoya Corporation. Active years: 2007-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Osamu Nagarekawa. Retrieved from https://idiyas.com/inventor/osamu-nagarekawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2007-2008

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2 patents (USPTO):Explore Patents

Title: The Innovations of Osamu Nagarekawa

Introduction

Osamu Nagarekawa is a prominent inventor based in Nirasaki, Japan. He has made significant contributions to the field of photomask technology, holding a total of 2 patents. His work is instrumental in advancing the capabilities of photomask blanks, which are crucial in the semiconductor manufacturing process.

Latest Patents

Nagarekawa's latest patents focus on the development of photomask blanks. These innovations are designed to enhance the precision and efficiency of photolithography, a key process in the production of integrated circuits.

Career Highlights

Osamu Nagarekawa is currently employed at Hoya Corporation, a leading company in the optics and imaging industry. His role at Hoya has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in photomask technology.

Collaborations

Throughout his career, Nagarekawa has worked alongside notable colleagues such as Masaru Mitsui and Shigekazu Matsui. Their combined expertise has fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Osamu Nagarekawa's contributions to the field of photomask technology exemplify the impact of dedicated inventors in advancing modern manufacturing processes. His work continues to influence the semiconductor industry and drive technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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