Buffalo, NY, United States of America

Orville T Beachley, Jr


Average Co-Inventor Count = 1.2

ph-index = 2

Forward Citations = 33(Granted Patents)


Company Filing History:


Years Active: 1986-2007

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4 patents (USPTO):Explore Patents

Title: Orville T Beachley, Jr: Innovator in Semiconductor Technology

Introduction

Orville T Beachley, Jr. is a notable inventor based in Buffalo, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative processes that enhance the production and application of semiconductor materials.

Latest Patents

Among his latest patents is a groundbreaking process for producing semiconductor nanocrystal cores, core-shell, core-buffer-shell, and multiple layer systems in a non-coordinating solvent utilizing in situ surfactant generation. This process is crucial for advancing the efficiency and effectiveness of semiconductor applications. Another notable patent involves the use of R.sub.2 MR' to prepare semiconductor and ceramic precursors. This patent describes cyclopentadienyl compounds of aluminum, gallium, and indium, which, when reacted at low temperatures with amines, phosphines, and arsines, form compounds that serve as potential precursors to ceramic materials and semiconductors.

Career Highlights

Orville T Beachley, Jr. is affiliated with The State University of New York, where he continues to contribute to research and development in semiconductor technology. His academic and professional endeavors have positioned him as a key figure in his field.

Collaborations

Throughout his career, Beachley has collaborated with esteemed colleagues such as Derrick W Lucey and David J MacRae. These partnerships have fostered innovation and have been instrumental in advancing their shared research goals.

Conclusion

Orville T Beachley, Jr. exemplifies the spirit of innovation in semiconductor technology through his patents and collaborations. His work continues to influence the field and pave the way for future advancements.

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