One-gyun La

Title: Innovations of One-gyun La

Introduction

One-gyun La is a prominent inventor based in Suwon, South Korea. He has made significant contributions to the field of memory technology, holding a total of 11 patents. His work primarily focuses on enhancing the performance and efficiency of integrated circuit memory devices.

Latest Patents

One-gyun La's latest patents include a 4-bit prefetch-type FCRAM featuring an improved data write control circuit in the memory cell array. This innovative design incorporates a command decoder, row decoder, column decoder, data input buffer, data output buffer, and a valid write window buffer. The command decoder outputs control commands in response to external input signals, while the row and column decoders activate the corresponding wordline and column select line of the memory cell array. Additionally, he has developed a method of masking data using this prefetch-type FCRAM. Another notable patent involves high burst rate write data paths for integrated circuit memory devices, which allows for parallel writing of N data bits and includes a write data path configured to receive 2N data bits from an external terminal.

Career Highlights

One-gyun La is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate in the field of memory technology. His work has significantly impacted the efficiency and performance of memory devices, making them more effective for various applications.

Collaborations

One-gyun La has collaborated with several colleagues, including Jung-Bae Lee, who is also a notable figure in the field. Their joint efforts have contributed to advancements in memory technology and have led to the development of several patents.

Conclusion

One-gyun La's contributions to memory technology through his innovative patents have established him as a key figure in the industry. His work continues to influence the development of advanced memory devices, showcasing the importance of innovation in technology.