Company Filing History:
Years Active: 2004
Title: Olli Kilpela: Innovator in Atomic Layer Deposition Technology
Introduction
Olli Kilpela is a notable inventor based in Helsinki, Finland. He has made significant contributions to the field of thin film technology through his innovative patent. His work focuses on enhancing the efficiency and effectiveness of atomic layer deposition reactors.
Latest Patents
Olli Kilpela holds a patent for an atomic layer deposition reactor. This invention involves various reactors designed for growing thin films on a substrate. The process includes subjecting the substrate to alternately repeated surface reactions of vapor-phase reactants. In one embodiment, the reactor features a reaction chamber divided into upper and lower parts by a showerhead plate. A first precursor is directed towards the lower half of the reaction chamber, while a second precursor is directed towards the upper half. The substrate is positioned within the lower half of the chamber. The showerhead plate contains multiple passages, allowing communication between the upper and lower halves. Additionally, the upper half can define a plasma cavity for in-situ radical formation. The design also includes a shutter plate to selectively open and close the passages in the showerhead plate, and arrangements to modify local gas flow patterns.
Career Highlights
Olli Kilpela is currently employed at Nobel Biocare Services AG, where he continues to develop innovative solutions in the field of thin film technology. His expertise in atomic layer deposition has positioned him as a key player in advancing this technology.
Collaborations
Olli collaborates with talented individuals such as Ville Antero Saanila and Wei-Min Li. Their combined efforts contribute to the ongoing development of cutting-edge technologies in their field.
Conclusion
Olli Kilpela's contributions to atomic layer deposition technology exemplify his innovative spirit and dedication to advancing thin film applications. His patent reflects a significant step forward in the efficiency of deposition processes.