Durham, NC, United States of America

Olle Claes Kordina


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 35(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Olle Claes Kordina: Innovator in Silicon Carbide Technology

Introduction

Olle Claes Kordina is a notable inventor based in Durham, NC (US). She has made significant contributions to the field of semiconductor technology, particularly in the growth of silicon carbide epitaxial layers. Her innovative work has implications for various applications in electronics and materials science.

Latest Patents

Kordina holds a patent for an improved chemical vapor deposition method that enhances the uniformity of silicon carbide epitaxial layers. This method is particularly useful for obtaining thicker epitaxial layers. The process involves heating a reactor to a temperature conducive to forming an epitaxial layer of silicon carbide on a substrate. A flow of source and carrier gases is then directed through the heated reactor. The carrier gases consist of a blend of hydrogen and a second gas with lower thermal conductivity than hydrogen. This innovative approach allows for less depletion of source gases as they pass through the reactor.

Career Highlights

Olle Claes Kordina is associated with Cree GmbH, a company known for its advancements in semiconductor technology. Her work at Cree has positioned her as a key player in the development of silicon carbide materials, which are essential for high-performance electronic devices.

Collaborations

Kordina has collaborated with notable colleagues, including Kenneth George Irvine and Michael James Paisley. These collaborations have furthered research and development in the field of silicon carbide technology.

Conclusion

Olle Claes Kordina's contributions to the field of silicon carbide epitaxial layers demonstrate her innovative spirit and commitment to advancing semiconductor technology. Her patent reflects a significant step forward in improving the uniformity and quality of silicon carbide materials.

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