Company Filing History:
Years Active: 2025
Title: Oh Hun Gwon - Innovator in Multilayer Electronic Components
Introduction
Oh Hun Gwon is a notable inventor based in Suwon-si, South Korea. He has made significant contributions to the field of electronic components, particularly through his innovative designs and patents. His work is recognized for its technical depth and practical applications in modern electronics.
Latest Patents
Oh Hun Gwon holds a patent for a multilayer electronic component. This component features a body that includes a dielectric layer and internal electrodes, along with external electrodes. The dielectric layer is composed of a variety of dielectric grains with a perovskite-based composition represented by ABO. The composition includes a first element, which consists of at least one of Bi, Na, K, Sr, and Ca, and a second element, which includes Ti. Notably, at least one of the dielectric grains possesses a core-shell structure, where the core portion contains a higher concentration of the first element compared to the shell portion. Additionally, the core portion is structured with a first core portion on the internal side and a second core portion that covers part of the first core portion, with the second core portion including Zr.
Career Highlights
Oh Hun Gwon is currently employed at Samsung Electro-Mechanics Co., Ltd., where he continues to develop innovative electronic solutions. His work has contributed to advancements in multilayer electronic components, enhancing their performance and reliability in various applications.
Collaborations
Throughout his career, Oh Hun Gwon has collaborated with talented colleagues, including Chan Hee Nam and Jae Hyun Park. These collaborations have fostered a creative environment that encourages innovation and the sharing of ideas.
Conclusion
Oh Hun Gwon is a distinguished inventor whose work in multilayer electronic components exemplifies innovation in the field of electronics. His contributions continue to influence the industry and pave the way for future advancements.