Ock-Ky Kim

Title: Ock-Ky Kim: Innovator in Photodiode Technology

Introduction

Ock-Ky Kim is a prominent inventor based in Bridgewater, NJ (US). He has made significant contributions to the field of photodiode technology, holding 2 patents that showcase his innovative approach to electronic devices.

Latest Patents

His latest patents include a back-illuminated photodiode with a wide bandgap cap layer. This invention features In.sub.0.53 Ga.sub.0.47 As p-i-n photodiodes that achieve room temperature dark currents as low as 0.1 nA at -10 V bias by introducing a wide bandgap (e.g., quaternary InGaAsP) cap layer on the ternary InGaAs. Another notable patent is for a long wavelength avalanche photodetector, which is useful at wavelengths as long as 1.7 microns with low noise. This device is constructed using successive layers of p-type indium phosphide, n-type indium phosphide, and n-type indium gallium arsenide, with an appropriate total of fixed charges in the n-type indium phosphide and a graded bandgap heterointerface region being crucial for improved results.

Career Highlights

Ock-Ky Kim is currently associated with AT&T Bell Laboratories, where he continues to push the boundaries of technology in his field. His work has been instrumental in advancing the capabilities of photodetectors, which are essential in various applications, including telecommunications and imaging systems.

Collaborations

Throughout his career, Ock-Ky Kim has collaborated with notable colleagues such as Stephen R. Forrest and Richard G. Smith. These partnerships have fostered an environment of innovation and have contributed to the success of his projects.

Conclusion

Ock-Ky Kim's contributions to photodiode technology reflect his dedication to innovation and excellence. His patents not only demonstrate his technical expertise but also pave the way for future advancements in the field.