Aliso Viejo, CA, United States of America

Noureddine Matine


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2004

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1 patent (USPTO):Explore Patents

Title: Inventor Noureddine Matine: Innovations in Heterojunction Bipolar Transistors

Introduction

Noureddine Matine, an accomplished inventor based in Aliso Viejo, California, has made significant contributions to the field of electronics. He is recognized for his inventive work that enhances the performance of semiconductor devices, particularly through his patented technology.

Latest Patents

Noureddine Matine holds a patent for a "Structure and method in an HBT for an emitter ballast resistor with improved characteristics." This innovation involves a heterojunction bipolar transistor (HBT) that incorporates an emitter with a uniquely structured emitter cap. The design includes a first high-doped layer, a low-doped layer, and a second high-doped layer, all positioned strategically to create an effective emitter ballast resistor. One noteworthy aspect of this invention is that the low-doped layer exhibits a resistance that remains consistent, irrespective of the dopant concentration level, and is primarily determined by its thickness.

Career Highlights

Currently, Noureddine Matine is associated with Skyworks Solutions, Inc., a prominent company in the field of semiconductor solutions. His position here has allowed him to contribute to cutting-edge technologies that propel advancements in electronic devices.

Collaborations

Throughout his career, Noureddine has collaborated with esteemed colleagues, including Kyushik Hong and Richard S. Burton. These partnerships have fostered an environment of innovation and creativity, leading to further enhancements in semiconductor technology.

Conclusion

In summary, Noureddine Matine stands out as an innovative inventor whose work on heterojunction bipolar transistors is paving the way for advancements in the electronics industry. His patent reflects a deep understanding of material properties and device structures, positioning him as a key contributor in this vital field of technology.

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