Norman J Geddes

Title: Innovations of Norman J Geddes

Introduction

Norman J Geddes is a notable inventor based in San Jose, CA (US). He has made significant contributions to the field of microelectronics, particularly through his innovative patents. With a total of 2 patents, his work has had a considerable impact on the development of advanced electronic devices.

Latest Patents

One of his latest patents is the M-I-M' device and fabrication method. This invention outlines a method for fabricating a microelectronic device of the metal/insulator/metal' type, where the insulator is an organic material. The process involves adhering a first electrically conductive lead to a conductive substrate and depositing a monomolecular layer of highly pure p-dodecyloxyphenylcarbamate on a second portion of the substrate. This layer is crucial for forming an organic film, with molecules oriented normal to the substrate surface. Following this, an oxide-free layer of magnesium is deposited at low temperatures, and a layer of silver is added to ensure conductivity. The device demonstrates rectifying behavior when subjected to large voltages, and it also includes methods for creating multilayer devices with an odd number of organic film layers.

Career Highlights

Norman J Geddes has worked at GTE Laboratories Incorporated, where he has been able to apply his innovative ideas in a collaborative environment. His career has been marked by a commitment to advancing technology in the microelectronics sector.

Collaborations

Throughout his career, Geddes has collaborated with notable colleagues, including Daniel J Sandman and John R Sambles. These partnerships have likely contributed to the success of his inventions and the development of new technologies.

Conclusion

Norman J Geddes is a distinguished inventor whose work in microelectronics has led to significant advancements in the field. His innovative patents, particularly the M-I-M' device and fabrication method, showcase his expertise and dedication to technology.