Location History:
- Kanagawa-ken, JP (2012 - 2013)
- Yokohama, JP (2013)
Company Filing History:
Years Active: 2012-2013
Title: Innovator Spotlight: Noriko Bota and Her Contributions to Nonvolatile Memory Technology
Introduction
Noriko Bota is a prominent inventor based in Kanagawa-ken, Japan, known for her groundbreaking work in the field of nonvolatile memory devices. With a total of four patents to her name, Bota has significantly contributed to advancements in memory technology that are crucial for modern computing.
Latest Patents
Among her latest patents, the first one details a nonvolatile memory device and method for manufacturing the same. This invention introduces an innovative structure in which multiple electrodes and memory portions are strategically layered, enhancing the device's efficiency and data retention capabilities. The design includes a substrate supporting a first electrode that extends in one direction, while additional electrodes cross at various angles, creating a complex yet effective memory architecture.
The second patent focuses on resistance-change memory technology. It consists of a variable resistance element featuring a laminated structure comprised of a first electrode, a resistance-change film, and a second electrode. This invention allows the device to switch between low-resistance and high-resistance states based on stored data, thereby improving performance and reliability in data storage.
Career Highlights
Currently, Noriko Bota works for Kabushiki Kaisha Toshiba, a well-respected company in the technology sector. Her expertise and innovative spirit have played an essential role in Toshiba's advancements in memory technology, garnering recognition within the industry.
Collaborations
Throughout her career, Noriko has collaborated with notable individuals such as Mitsuru Sato and Kohichi Kubo. These partnerships underscore the importance of teamwork in the innovative space and contribute to the successful development of cutting-edge technologies.
Conclusion
Noriko Bota continues to lead the way in technological innovations, particularly in nonvolatile memory devices. Her contributions are instrumental in shaping the future of memory technology and highlight her significance in the realm of inventors and innovations. Through her work, she inspires the next generation of engineers and inventors to strive for excellence in their fields.