Yokohama, Japan

Nobutaka Matsuoka

USPTO Granted Patents = 2 

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 26(Granted Patents)


Company Filing History:


Years Active: 1989-1990

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2 patents (USPTO):Explore Patents

Title: Nobutaka Matsuoka: Innovator in Semiconductor Technology

Introduction

Nobutaka Matsuoka is a prominent inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods for manufacturing semiconductor devices, which are crucial for modern electronics.

Latest Patents

Matsuoka's latest patents include a method of manufacturing from a semiconductor wafer a dielectric substrate. This method involves forming a silicon oxide film on a monocrystalline semiconductor wafer and creating a mask for patterning. The process results in a dielectric substrate with insulated and separated island regions. Another notable patent is for a method of manufacturing an SOI-type semiconductor device. This device comprises a first semiconductor substrate, an oxide film, and a second semiconductor substrate bonded to the oxide film, featuring circuit elements formed within a monocrystalline silicon layer.

Career Highlights

Throughout his career, Matsuoka has worked with notable companies, including Kabushiki Kaisha Toshiba. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Matsuoka has collaborated with esteemed colleagues such as Kaoru Nakagawa and Yoshio Yamamoto. Their combined expertise has furthered the development of innovative semiconductor solutions.

Conclusion

Nobutaka Matsuoka's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.

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