Kawasaki, Japan

Noburo Matsuda


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 87(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: **Noburo Matsuda: A Pioneer in Vertical MOSFET Technology**

Introduction

Noburo Matsuda, based in Kawasaki, Japan, is an innovative inventor known for his contributions to semiconductor technology. With a keen eye for detail and a passion for electronic engineering, he has made notable advancements in the design and functionality of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors).

Latest Patents

Matsuda holds a patent for a "Vertical MOSFET having trench covered with multilayer gate film." This revolutionary design features a vertical MOSFET that includes a trench coated with an insulating layer characterized by a multilayer structure. His innovation aims to minimize the change in gate threshold voltage. Key parameters such as the equivalent silicon dioxide thickness of the gate insulating layer and the radius of curvature of the trench's upper corner are optimized to ensure that the dielectric breakdown electric field strength of the gate insulating layer ranges between 2.5 MV/cm and 5.0 MV/cm. This advancement is significant in enhancing the reliability and efficiency of MOSFET devices.

Career Highlights

Noburo Matsuda is currently associated with Toshiba Corporation, a leading global technology firm. His work within the company is highlighted by his dedication to pushing the boundaries of semiconductor technology. Throughout his career, he has developed innovative solutions that address the challenges faced in electronics and semiconductor design.

Collaborations

In his journey as an inventor, Matsuda has collaborated with notable colleagues, including Yoshiro Baba and Satoshi Yanagiya. These collaborations have fostered a creative environment that enhances the development of groundbreaking technologies in the field of electronics.

Conclusion

Noburo Matsuda's contributions to the semiconductor industry, particularly with his patent for vertical MOSFET technology, exemplify the potential of innovative engineering. His work continues to inspire advancements in electronic components, showcasing the importance of collaboration and creativity in the field of inventions.

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