Nitin B Parekh

Title: Nitin B Parekh: Innovator in Semiconductor Technology

Introduction

Nitin B Parekh is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a patented method that enhances the manufacturing process of semiconductor substrates.

Latest Patents

Nitin B Parekh holds a patent for "Forming wide dielectric-filled isolation trenches in semi-conductors." This invention provides a method for forming a planarized dielectric-filled wide shallow trench in a semiconductor substrate. The process involves depositing a layer of etch stop, such as Si₃N₄, onto the substrate, followed by the formation of wide trenches through the etch stop into the substrate using conventional reactive ion etching (RIE). The invention also includes a series of steps that ensure a planarized upper surface of SiO₂ and Si₃N₄ on the substrate, which is crucial for the performance of semiconductor devices.

Career Highlights

Nitin B Parekh is associated with International Business Machines Corporation (IBM), where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the efficiency of semiconductor manufacturing but has also paved the way for future innovations in the industry.

Collaborations

Throughout his career, Nitin has collaborated with esteemed colleagues, including Somanath Dash and Michael L Kerbaugh. These collaborations have fostered a productive environment for innovation and have led to significant advancements in semiconductor technology.

Conclusion

Nitin B Parekh's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the industry and inspire future innovations.