Company Filing History:
Years Active: 2001
Title: The Innovative Contributions of Nick S Argenti
Introduction
Nick S Argenti is a notable inventor based in Dansville, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the formation of cobalt salicide layers. His work has implications for improving the performance and reliability of MOS transistor structures.
Latest Patents
Argenti holds a patent for a process titled "Process for the formation of cobalt salicide layers employing a sputter etch surface preparation step." This innovative process focuses on forming self-aligned cobalt silicide layers on MOS transistor structures. It effectively reduces the risk of creating cobalt silicide bridges between source/drain regions and silicon gates. The process incorporates an optimized argon sputter etch surface preparation step prior to cobalt layer deposition. This step utilizes a DC bias of less than -278 volts to minimize backsputtering of silicon onto gate sidewall spacers by argon ions. The preferred argon etch sputter steps use a DC bias of less than -80 volts, targeting a native silicon dioxide etch rate of no more than 5 angstroms per minute, with a goal of removing 20 to 60 angstroms of native silicon dioxide.
Career Highlights
Nick S Argenti has been associated with National Semiconductor Corporation, where he has contributed to advancements in semiconductor manufacturing processes. His expertise in cobalt salicide formation has positioned him as a valuable asset in the field.
Collaborations
Argenti has worked alongside talented colleagues, including Abu-Hena Mostafa Kamal and Christopher S Blair. Their collaborative efforts have furthered the development of innovative technologies in the semiconductor industry.
Conclusion
Nick S Argenti's contributions to the field of semiconductor technology, particularly through his patented process for cobalt salicide layer formation, highlight his innovative spirit and dedication to advancing the industry. His work continues to influence the performance of MOS transistor structures, showcasing the importance of innovation in technology.