Company Filing History:
1 out of 832,880 Years Active: 2004
Title: Innovations of Nicholas H Tripisas
Introduction
Nicholas H Tripisas is an accomplished inventor based in San Jose, California. He has made significant contributions to the field of semiconductor technology, particularly with his innovative patent related to MONOS devices.
Latest Patents
Nicholas holds a patent for a MONOS device having a buried metal silicide bit line. This invention involves a charge trapping dielectric layer, such as an oxide-nitride-oxide (ONO) layer, formed on a substrate. A recess is created through the ONO layer and into the substrate, where a metal silicide bit line is formed. Additionally, bit line oxide is created on top of the metal silicide. A word line is then formed over the ONO layer and the bit line oxide, with a low resistance silicide provided on top of the word line. The silicide is formed through methods such as laser thermal annealing. Nicholas has 1 patent to his name.
Career Highlights
Throughout his career, Nicholas has demonstrated a strong commitment to advancing technology in the semiconductor industry. His work has been instrumental in developing more efficient and effective devices that enhance performance and reliability.
Collaborations
Nicholas has collaborated with notable professionals in his field, including Jusuke Ogura and Mark T Ramsbey. These partnerships have contributed to the success of his projects and innovations.
Conclusion
Nicholas H Tripisas is a notable inventor whose work in semiconductor technology has led to significant advancements. His innovative patent for a MONOS device showcases his expertise and dedication to the field.