Maplewood, NJ, United States of America

Netzer Amorai-Moriya


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: **Netzer Amorai-Moriya: Innovator in Semiconductor Fabrication**

Introduction

Netzer Amorai-Moriya, based in Maplewood, NJ, is an accomplished inventor recognized for his innovative contributions to semiconductor technology. With a focus on enhancing the fabrication processes of strained semiconductor structures, his work holds significant implications for advancements in electronics and material sciences.

Latest Patents

Amorai-Moriya holds a patent for "Reverse side etching for producing layers with strain variation." This groundbreaking method introduces a new technique to fabricate strain patterns on a strained semiconductor structure. The process allows for the control of material properties by etching the reverse side of a substrate, enabling the formation of selectively strained regions without affecting the sensitive front-side of the semiconductor structures. Notably, this method can be applied to develop advanced semiconductor structures including quantum wires, quantum dots, and quantum well devices.

Career Highlights

Amorai-Moriya is currently associated with AT&T Corp., where he applies his expertise in semiconductor research and development. His career is marked by a commitment to exploring novel methods that push the boundaries of current technologies in the field of electronics.

Collaborations

He has collaborated with renowned colleagues, including Igal M Brener and Leonard C Feldman. These partnerships have aided in the progression of research and development efforts that contribute to cutting-edge innovations in semiconductor technology.

Conclusion

Netzer Amorai-Moriya's inventive contributions reflect a significant advancement in the semiconductor industry. Through his patented methods and collaborative efforts, he continues to influence the way strained semiconductor structures are developed, paving the way for future innovations in electronic devices. His work exemplifies the importance of innovation in enhancing material properties to meet the evolving demands of technology.

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