Company Filing History:
Years Active: 1994
Title: Innovations by Navid S Fatemi in Semiconductor Technology.
Introduction
Navid S Fatemi is a notable inventor based in University Heights, OH (US). He has made significant contributions to the field of semiconductor technology, particularly in enhancing the performance of InP semiconductor devices.
Latest Patents
Navid S Fatemi holds a patent for "Low resistance contacts for shallow junction semiconductors." This patent describes a method of enhancing the specific contact resistivity in InP semiconductor devices. The innovation involves using gold ohmic contacts that contain small amounts of gallium or indium, along with a thin gold phosphide interlayer. This combination results in ultra-low specific contact resistivities, which are crucial for improving device performance. The patent emphasizes the importance of thermal stability achieved by depositing a layer of refractory metal over the gold phosphide interlayer.
Career Highlights
Navid S Fatemi is associated with Sverdrup Technology, Inc., where he continues to work on advancing semiconductor technologies. His expertise in the field has led to the development of innovative solutions that address critical challenges in semiconductor device fabrication.
Collaborations
Navid has collaborated with Victor George Weizer, contributing to the advancement of semiconductor technologies through their combined expertise.
Conclusion
Navid S Fatemi's work in semiconductor technology, particularly his patented innovations, showcases his commitment to enhancing device performance and reliability. His contributions are significant in the ongoing evolution of semiconductor applications.