Bengaluru, India

Navakant Bhat


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):

Title: Navakant Bhat: Innovator in High Electron Mobility Transistors

Introduction

Navakant Bhat is a prominent inventor based in Bengaluru, India. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors (HEMTs). His innovative work has led to advancements that are crucial for various electronic applications.

Latest Patents

Navakant Bhat holds a patent for a High Electron Mobility Transistor (HEMT) with a reduced surface field (RESURF) junction. This invention provides a HEMT that includes a source electrode at one end and a drain electrode at the other end, with a gate electrode positioned between them. The RESURF junction extends from the source to the drain, and the gate electrode is situated above this junction. Notably, a buried channel layer is formed in the RESURF junction when a positive voltage is applied to the gate electrode. The RESURF junction comprises an n-type Gallium nitride (GaN) layer and a p-type GaN layer, with the n-type layer positioned between the p-type layer and the gate electrode. This innovative design enhances the performance of HEMTs in various applications.

Career Highlights

Navakant Bhat is affiliated with the Indian Institute of Science, where he conducts research and development in semiconductor technologies. His work has garnered attention for its potential impact on the electronics industry. He has made significant strides in improving the efficiency and effectiveness of electronic components through his innovative designs.

Collaborations

Navakant Bhat collaborates with talented individuals in his field, including Rohith Soman and Ankit Soni. These collaborations foster an environment of innovation and creativity, leading to further advancements in semiconductor technology.

Conclusion

Navakant Bhat's contributions to the field of high electron mobility transistors exemplify the spirit of innovation in semiconductor technology. His patent for a HEMT with a RESURF junction showcases his commitment to advancing electronic components. Through his work at the Indian Institute of Science and collaborations with fellow researchers, he continues to push the boundaries of technology.

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