Company Filing History:
Years Active: 2016-2020
Title: Naoki Ihata: Innovator in Memory Device Technology
Introduction
Naoki Ihata is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory device technology, holding a total of 2 patents. His work focuses on innovative methods for enhancing memory device structures and functionalities.
Latest Patents
Ihata's latest patents include a three-dimensional memory device featuring dual configuration support pillar structures. This invention outlines methods for creating memory openings and support openings within a memory array region. The process involves an alternating stack of insulating layers and spacer material layers. Additionally, pedestal channel portions and semiconductor portions are formed at the base of these openings. The design incorporates semiconductor oxide plates strategically placed in a subset of support openings, ensuring optimal performance.
Another notable patent involves batch contacts for multiple electrically conductive layers. This invention describes a stepped structure formed on a stack of alternating insulator and material layers. The design allows for efficient electrical contact through a contact via structure, enhancing the functionality of memory devices.
Career Highlights
Naoki Ihata is currently employed at SanDisk Technologies Inc., where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable.
Collaborations
Ihata has collaborated with notable colleagues, including Takeshi Kawamura and Akihisa Sai. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.
Conclusion
Naoki Ihata's contributions to memory device technology exemplify his dedication to innovation. His patents reflect a deep understanding of complex engineering principles and a commitment to advancing the field. His work continues to influence the future of memory technology.