Nan-Ray Wu

Title: The Innovations of Nan-Ray Wu

Introduction

Nan-Ray Wu is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of flash memory technology. With a total of two patents to his name, Wu's work has had a notable impact on the industry.

Latest Patents

Nan-Ray Wu's latest patents focus on methods of manufacturing flash memory cells. One of his patents describes a method that includes providing a substrate with a first dielectric layer, forming a control gate on this layer, and creating an oxide-nitride-oxide (ONO) spacer on the control gate's sidewalls. Additionally, it involves forming a second dielectric layer on the substrate at both sides of the ONO spacer and establishing a floating gate at the outer sides of the ONO spacer on the second dielectric layer. This innovative approach enhances the efficiency and performance of flash memory cells.

Career Highlights

Wu is currently employed at Taiwan Memory Company, where he continues to develop cutting-edge technologies in memory storage. His expertise in the field has positioned him as a key player in advancing flash memory solutions.

Collaborations

Some of his notable coworkers include Yung-Chang Lin and Le-Tien Jung. Their collaborative efforts contribute to the innovative environment at Taiwan Memory Company.

Conclusion

Nan-Ray Wu's contributions to flash memory technology through his patents and work at Taiwan Memory Company highlight his importance in the field. His innovative methods are paving the way for advancements in memory storage solutions.