Company Filing History:
Years Active: 1992-1993
Title: Namoi Awano: Innovator in Semiconductor Technology
Introduction
Namoi Awano is a prominent inventor based in Nagoya, Japan. She has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase her innovative approach to device design.
Latest Patents
Namoi's latest patents focus on a semiconductor device utilizing Group III and V element compound semiconductors, such as gallium arsenide. The device is formed on a semiconductor wafer through a process known as MOCVD. It features a first pair of convex portions, a second pair of convex portions, and a crossing portion, all created through etching with a predetermined substance. This design ensures that one convex portion of each pair is opposite to the other, with a consistent crystalline surface exposed at the crossing points. The device includes a pair of input terminals and a pair of output terminals, which are electrically connected to each convex portion. This configuration allows for the input of electric current and the output of voltage generated in response to magnetic field strength, effectively preventing unbalanced voltage due to the geometrical balance of the convex portions.
Career Highlights
Namoi Awano is currently employed at Nippondenso Co., Ltd., where she continues to develop her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of semiconductor devices, contributing to the broader field of electronics.
Collaborations
Namoi has collaborated with notable colleagues, including Yasutoshi Suzuki and Kouichi Hoshino, enhancing her projects with diverse insights and expertise.
Conclusion
Namoi Awano stands out as a key figure in semiconductor innovation, with her patents reflecting her commitment to advancing technology. Her contributions are vital to the ongoing development of efficient and effective semiconductor devices.