Company Filing History:
Years Active: 1990-2001
Title: The Innovative Contributions of Nagisa Ohsako
Introduction
Nagisa Ohsako is a prominent inventor based in Yokohama, Japan. She has made significant contributions to the field of materials science, particularly in the development of advanced conductive materials. With a total of 3 patents to her name, Ohsako continues to push the boundaries of innovation.
Latest Patents
One of her latest patents focuses on the protection of oxide superconductors. This invention efficiently protects high-temperature oxide superconductors from the detrimental effects of water and acids by forming a passivation layer of fluoride. The fluoride layer is composed of elements that either make up the oxide superconductor or can replace some of its components.
Another notable patent is a process for the preparation of electroconductive polymeric material. This process involves forming fine grooves in a substrate, embedding a polymerization reaction catalyst in these grooves, and then bringing a monomer into contact with the catalyst. This method allows for the selective formation of fine wiring of the electroconductive polymeric material, resulting in a polymeric material with excellent electroconductivity.
Career Highlights
Nagisa Ohsako is currently employed at Fujitsu Corporation, where she applies her expertise in materials science to develop innovative solutions. Her work has garnered attention in both academic and industrial circles, showcasing her commitment to advancing technology.
Collaborations
Ohsako has collaborated with notable colleagues, including Kyung-ho Park and Kohta Yoshikawa. These partnerships have further enriched her research and development efforts, leading to groundbreaking advancements in her field.
Conclusion
Nagisa Ohsako's contributions to the field of materials science exemplify her innovative spirit and dedication to research. Her patents not only enhance the understanding of conductive materials but also pave the way for future technological advancements.