Location History:
- Millington, NJ (US) (1992)
- Bridgewater, NJ (US) (1990 - 1996)
Company Filing History:
2 out of 3,345 
1 out of 9,364 
1 out of 4,208 
Years Active: 1990-1996
Title: **Innovative Contributions of Nadia Lifshitz in Semiconductor Technologies**
Introduction
Nadia Lifshitz is a distinguished inventor based in Bridgewater, NJ, known for her significant contributions to the field of semiconductor technology. With a total of six patents, she has made noteworthy advancements that enhance the functionality and efficiency of electronic devices.
Latest Patents
Among Nadia’s latest inventions is a patent on **Metal Oxide Semiconductor Transistors Having a Polysilicon Gate**. This innovation involves a unique gate electrode structure that includes a heavily doped region near the source and a lightly doped region near the drain. This design effectively reduces electric fields in the channel, minimizing field-induced leakage currents when the transistor is turned off.
Another notable patent is her work on the **Self-Aligned Method of Fabrication for Closely Spaced Apart Metallization**. This method improves the manufacturing process for electronic devices, such as SRAM cell arrays. It involves creating parallel metallization lines by utilizing aluminum layers over a dielectric oxide layer, ensuring precision in electronics fabrication.
Career Highlights
Throughout her career, Nadia Lifshitz has worked at renowned organizations, including AT&T Bell Laboratories and Lucent Technologies Inc. Her experience at these leading companies has expanded her expertise in semiconductor technologies and innovation.
Collaborations
During her professional journey, Nadia has collaborated with notable colleagues such as John M. Andrews, Jr. and Gerald Smolinsky. These partnerships have fostered a stimulating environment for creativity and innovation in semiconductor research.
Conclusion
In conclusion, Nadia Lifshitz exemplifies the spirit of innovation in the semiconductor field. Her groundbreaking patents and collaborations highlight her role as a pivotal contributor to advancements in electronic device functionality. Her work continues to inspire future generations of inventors and engineers in the technology landscape.