Company Filing History:
Years Active: 2024
Title: Myung-Su Kim: Innovator in Dynamic Memory Technology
Introduction
Myung-Su Kim is a distinguished inventor based in Daejeon, South Korea, known for his groundbreaking contributions to dynamic memory technology. With two patents to his name, Kim has made significant advancements in the field of memory devices that can greatly enhance data storage and retrieval.
Latest Patents
Among his notable patents, the first is titled "Dynamic random access memory device with long retention and operating method thereof." This invention describes a DRAM device capable of storing charges for extended periods, featuring a complex structure that includes a channel region, gate insulating film region, floating gate region, transition layer region, and control gate region, which work in tandem to manage charge storage effectively.
His second patent, "Steep-slope field-effect transistor and fabrication method thereof," introduces a novel steep-slope field-effect transistor. This device is designed to optimize charge management using a reference potential applied to the control gate, facilitating the discharge or storage of charges in the floating gate. This breakthrough offers promising applications in high-performance electronic devices.
Career Highlights
Myung-Su Kim has excelled in his role at the Korea Advanced Institute of Science and Technology (KAIST), leveraging his expertise to drive innovation in memory technology. His research focuses on enhancing the efficiency and efficacy of electronic components, especially in dynamic random access memory systems.
Collaborations
Throughout his career, Kim has collaborated with notable professionals in the field, including his coworker Yang-Kyu Choi. These partnerships have allowed him to explore various facets of memory technology, leading to the development of significant patents that contribute to the advancement of the industry.
Conclusion
In summary, Myung-Su Kim stands out as a pivotal figure in the realm of dynamic memory technology. His innovative patents reflect a deep understanding of electronic materials and engineering, promising to influence future advancements in memory devices. As he continues his work at KAIST, the potential for further innovations remains bright, positioning him as a key contributor to the field.