Suwon, South Korea

Myoung-Jae Kim


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 21(Granted Patents)


Company Filing History:


Years Active: 1999

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1 patent (USPTO):Explore Patents

Title: **Myoung-Jae Kim: Innovator in Nonvolatile Memory Technology**

Introduction

Myoung-Jae Kim is a notable inventor based in Suwon, South Korea, recognized for his contributions to the field of memory technology. With a keen focus on advanced nonvolatile memories, he has made significant strides that bridge the gap between nonvolatile and dynamic random access memories.

Latest Patents

Myoung-Jae Kim holds a patent for "Advanced Nonvolatile Memories Adaptable to Dynamic Random Access." This innovative memory technology features a memory array organized into multiple blocks, further divided into sub-blocks. The design includes reading and writing row decoders that facilitate efficient selection of memory rows, and specialized gate drive circuits that manage the supply of source voltages. Additionally, his design incorporates section decoders positioned between sub-blocks, optimizing the connection between drive lines and memory rows for enhanced performance.

Career Highlights

Currently, Myoung-Jae Kim works at Samsung Electronics Co., Ltd., a global leader in technology and innovation. His role involves collaborating with cutting-edge teams to propel advancements in memory technology, reflecting the company's commitment to innovation and excellence in the tech industry.

Collaborations

In his professional journey, Myoung-Jae Kim has collaborated with esteemed colleagues, including Byeng-Sun Choi and Tae-Sung Jung. These partnerships foster a creative synergy that drives innovation and the development of transformational technologies in the realm of memory solutions.

Conclusion

Myoung-Jae Kim stands out as a pivotal figure in the evolution of nonvolatile memory technologies. His inventive spirit and collaborative efforts at Samsung Electronics Co., Ltd. position him as a vital contributor to advancements that enhance memory efficiency and adaptability in modern computing.

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