Mukta G Rarooq

Title: Mukta G Rarooq: Trailblazer in Semiconductor Innovations

Introduction

Mukta G Rarooq, an accomplished inventor based in Hopewell Junction, NY, has made significant contributions to the field of semiconductor technology. With a focus on creating innovative solutions, her work stands out in a competitive industry, reflecting her dedication to advancing technology.

Latest Patents

Mukta holds a patent for an "Optimized annular copper TSV," which addresses critical challenges in semiconductor substrate reliability. This invention provides a thermo-mechanically reliable copper through-silicon via (TSV), employing a unique annular trench design that enhances performance during back-end of line (BEOL) processing. The invention specifies a trench structure with separated inner and outer sidewalls between 5 to 10 microns, facilitating a conductive path of copper or a copper alloy that connects essential components laid upon a dielectric layer.

Career Highlights

As an inventor working at the International Business Machines Corporation (IBM), Mukta has succeeded in integrating her innovative ideas into practical applications within the semiconductor arena. Her dedication to her craft not only reflects a strong commitment to advancement but also establishes her as an influential figure at IBM.

Collaborations

In her journey, Mukta has collaborated with notable coworkers, including Paul Stephen Andry and Robert Hannon. These partnerships further illustrate the collaborative spirit of innovation at IBM and showcase the collective effort involved in cutting-edge research and development.

Conclusion

Mukta G Rarooq exemplifies the qualities of an innovative inventor. With her groundbreaking patent and valuable contributions to semiconductor technology, she continues to shape the future of the industry through her work. Her story serves as an inspiration to emerging inventors and professionals in the technology field.