Mu-Tien Chang

Title: The Innovations of Mu-Tien Chang

Introduction

Mu-Tien Chang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of electronics, particularly in the development of SRAM cell technology. His innovative work has led to the creation of a unique apparatus that enhances data storage efficiency.

Latest Patents

Mu-Tien Chang holds a patent for a "Dual-threshold-voltage two-port sub-threshold SRAM cell apparatus." This invention relates to a dual-threshold-voltage two-port sub-threshold SRAM cell apparatus. The apparatus comprises a first inverter, a second inverter, an access transistor, and a read buffer. The first inverter and the second inverter include a plurality of first operating elements and a plurality of second operating elements for storing data. The access transistor is coupled to the first inverter and the second inverter, wherein the first operating elements and the second operating elements are high threshold voltage operating elements, and the access transistor is a low threshold voltage operating transistor. The read buffer is used for performing a read operation. This patent showcases his expertise in creating efficient electronic components.

Career Highlights

Mu-Tien Chang is affiliated with National Yang Ming Chiao Tung University, where he continues to engage in research and development. His work at the university allows him to collaborate with other experts in the field and contribute to advancements in technology.

Collaborations

Some of his notable coworkers include Po-Tsang Huang and Wei Hwang. Their collaborative efforts have further enriched the research environment and fostered innovation in their projects.

Conclusion

Mu-Tien Chang's contributions to the field of electronics, particularly through his patented SRAM cell apparatus, highlight his role as an influential inventor. His work continues to impact the industry and inspire future innovations.